Designing non-volatile ferroelectric control of magnetic order in multiferroic In2Se3/bilayer FeCl2/In2Se3 heterostructure

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Abstract The ferroelectric (FE) control of magnetism is of great importance for designing non-volatile, low-power-consumption memories. Existing studies mostly focus on monolayer ferromagnets, lacking exploration of spin-split mechanisms in bilayer antiferromagnets and multifunctional devices. Here, a two-dimensional (2D) multiferroic van der Waals (vdW) heterostructure (HS) with bilayer A-type antiferromagnet 1T-FeCl2 sandwiched between FE In2Se3 was proposed to investigate the electronic structure using first-principles calculations. FE polarization directions of the top and bottom In2Se3 layers were switched to obtain four polarization configurations of the HS. Although bilayer 1T-FeCl2 (bi–FeCl2) still exhibits intralayer ferromagnetic (FM) and interlayer antiferromagnetic (AFM) coupling, FE polarization notably causes the spin-polarized splitting of the bi–FeCl2 bands (up to 0.34 eV), creating spin-up and spin-down polarized current channels in different layers of FeCl2. This phenomenon is attributed to interfacial charge redistribution at the In2Se3/FeCl2 interface. Leveraging this, we designed a non-volatile, electric field-manipulated four-state spin field-effect transistor (FET), breaking the functional limitations of traditional single-switch devices and providing a specific strategy for spintronics research.

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