O/H Supercritical Fluid Passivation on Stacked Ge0.95Si0.05 Nanosheet nFETs

Résumé fourni par la source

O/H supercritical fluid (SCF) passivation enhances$\mathbf{I}_{\mathbf{ON}}$and reduces SS in stacked$\mathbf{Ge}_{0.95}\mathbf{Si}_{0.05}$nanosheet nFETs. With O-SCF,$\mathbf{I}_{\mathbf{ON}}$reaches$53\boldsymbol{\mu}\mathbf{A}$per floor at$\mathbf{V}_{\mathbf{OV}}=\mathbf{V}_{\mathbf{DS}}=0.5\mathbf{V}$, while$250^{\circ}\mathbf{C}$H-SCF achieves a record$\mathbf{I}_{\text{ON}}$of$73\boldsymbol{\mu}\mathbf{A}$per floor. O-SCF reduces oxygen vacancies in$\mathbf{Hf}_{0.2}\mathbf{Zr}_{0.8}\mathbf{O}_{2}$, while H-SCF passivates$\mathbf{D}_{\text{it}}$at the$\mathbf{Hf}_{0.2} \mathbf{Zr}_{0.8} \mathbf{O}_{2} / \mathbf{Ge}_{0.95} \mathbf{Si}_{0.05}$interface. H-SCF can outperform O-SCF, achieving improved$\mathbf{I}_{\text{ON}}$and SS due to higher diffusion coefficient and more effective passivation of H than O [1]. In addition, it does not form an interfacial layer, preserving large$\mathbf{C}_{\mathbf{OX}}$.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.