Copper-Based Semiconductor Nanocrystal Hole-Transport Layers Enable Efficient and Stable Sb2S3 Solar Cells

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Abstract High-efficiency antimony sulfide (Sb2S3) solar cells have successfully learned from the device structure of perovskite solar cells and often use spiro-OMeTAD as the hole-transporting layer (HTL). However, the stability of spiro-OMeTAD under an atmospheric environment is poor. It is generally believed that copper-based semiconductor nanocrystals (NCs), demonstrating appropriate valence band maximum (VBM), remarkable stability, and abundant elements, are suitable for the HTLs. In practice, however, related research has mainly focused on perovskite solar cells. In this work, Cu2SnS3, Cu2ZnSnS4, and CuInS2 nanocrystals are synthesized by the hot injection method and successfully used as HTLs in high-efficiency Sb2S3 solar cells. Through hexanethiol ligand exchange, dense and continuous copper-based semiconductor nanocrystal films are prepared by the spin coating method. Furthermore, the device performances of Sb2S3 solar cells based on Cu2SnS3, Cu2ZnSnS4, and CuInS2 HTLs are up to 6.52, 6.70, and 7.06%, respectively. It shows a comparable performance with the traditional spiro-OMeTAD (7.10%) and significantly improved stability compared to the Sb2S3 solar cell based on the spiro-OMeTAD HTL in an air atmosphere. This work highlights the importance of HTL in achieving high-efficiency and stable Sb2S3 optoelectronic devices.

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