Modulation of Single Photon Emission from Suspended 1L WSe2 under Electrostatically Induced Strain

Le résumé fourni par la source

Tungsten diselenide (WSe 2 ) monolayers under strain are promising hosts for quantum emitters. To date, WSe 2 quantum emitter strain engineering has focused primarily on draping WSe 2 monolayers on patterned substrates and nanoindentation, which suffer from poor control over strain. In this work, we employ an electrostatic approach to dynamically control tensile strain in monolayer WSe 2 suspended over micron-scale cavities with a back gate contact. Room-temperature measurement of electrostatically induced deflection and photoluminescence at T = 100 K shows that a 0.22–0.26% increase in tensile strain can be achieved at modest gate voltages. Sharp localized emitters showed improvement in single photon purity from g (2) (0) = 0.55 ± 0.04 at 0 V to g (2) (0) = 0.40 ± 0.05 at –30 V due to strain-induced alignment of defect and dark exciton states and classical light background suppression.

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