X-ray irradiation studies on the Monopix DMAPS in 150 nm and 180 nm

Le résumé fourni par la source

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aiming for the ATLAS Inner Tracker outer layer requirements. Those include a tolerance to ionizing radiation of up to 100 Mrad. It was evaluated by irradiating both devices with X-rays to the corresponding ionization dose, showing no significant degradation of the performance at 100 Mrad and continuous operability throughout the irradiation campaign.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.