Strain-induced in-plane anomalous Hall effect in single-crystalline Fe(211) films

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We present a systematic investigation of the in-plane anomalous Hall effect (IPAHE) induced by the in-plane magnetization in single-crystalline Fe(211) films epitaxially grown on MgO(110) substrates. A single-crystal domain in the Fe(211) films is well controlled using slightly miscut substrates, enabling precise observation of the IPAHE. A pronounced IPAHE is observed when the magnetization aligns along the $\mathrm{Fe}[\overline{1}11]$ direction, with the in-plane anomalous Hall resistivity ${\ensuremath{\rho}}_{\mathrm{IPAH}}$ reaching its maximum value and showing independence from the current direction. This behavior aligns with phenomenological models dictated by crystalline symmetry and likely stems from epitaxial strain in the films. The scaling relationship between ${\ensuremath{\rho}}_{\mathrm{IPAH}}$ and the longitudinal resistivity across a range of temperatures and film thicknesses is systematically analyzed. A nonmonotonic temperature dependence of ${\ensuremath{\rho}}_{\mathrm{IPAH}}$ indicates a complex interplay between extrinsic and intrinsic mechanisms. Our study provides experimental insight into the mechanisms underlying IPAHE and highlights the potential for tailoring IPAHE through film thickness and strain engineering.

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