Abnormal Oriented Grains(AOG) Controlled of AlxSc1-xN Bimorph Stack and Piezoelectric Properties Characterization at 8-inch Wafer

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In this paper, we present an optimization of a bimorph stack utilizing AlxSc1-xN on an 8-inch silicon wafer. The control of abnormally oriented grains (AOG) was achieved by incorporating Al0.9Sc0.1N and Al0.8Sc0.2N composite films. The capacitance (C0) and piezoelectric coefficients (d33) of the fabricated composite bimorph stack were evaluated using a Double Beam Laser Interferometer (DBLI) at the wafer level. Additionally, the relative dielectric constant (εr) were calculated. Results indicate that the composite bimorph stack exhibits a lower density of AOGs and improved uniformity in C0and d33distributions compared to the Al0.8Sc0.2N bimorph stack. Furthermore, the reduction in d33observed in the composite bimorph stack remains within acceptable limits. The AlxSc1-xN bimorph stack, enhanced with composite films, offers a promising solution for the mass production of high-performance piezoelectric MEMS devices.

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