Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance
Rattachement africain : cn. Niveau de preuve : code pays fourni par la source.
Le résumé fourni par la source
An electrically injected vertical-cavity surface-emitting laser (VCSEL) with quantum-well-embedded InGaN quantum dots (QDs) as the active region was designed. The InGaN QD size and cavity length were optimized using PICS3D simulation software to achieve a high-performance InGaN QD-embedded VCSEL. A comparative analysis between the InGaN QD VCSEL and the traditional InGaN quantum well VCSEL was conducted, and the results demonstrated that the InGaN QD VCSEL achieved higher stimulated recombination radiation and internal quantum efficiency. The threshold current was reduced to 4 mA, corresponding to a threshold current density of 5.1 kA/cm², and the output power reached 4.4 mW at an injection current of 20 mA. A stable single-longitudinal-mode output was also achieved with an output wavelength of 436 nm. The proposed novel quantum-well-embedded QD active-region VCSEL was validated through theoretical simulations, confirming its feasibility. This study provides theoretical guidance and key epitaxial structural parameters for preparing high-performance VCSEL epitaxial materials.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.
- Titre Crossref
- Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance
- Date Crossref
- 17/03/2025
- Éditeur
- MDPI AG
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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Taiyuan University of Technology Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education pays non établi dans la noticeUniversité ou école supérieure
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Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering pays non établi dans la noticeStructure de recherche
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Shaanxi University of Science and Technology pays non établi dans la noticeUniversité ou école supérieure
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School of Physics & Information Science Xi’an Key Laboratory of Compound Semiconductor Materials and Devices pays non établi dans la noticeUniversité ou école supérieure
Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education — Taiyuan University of Technology, Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering et Shaanxi University of Science and Technology, avec 1 autre affiliation.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.