Low-Pressure Annealing and Surface Passivation of Self-Powered Wide-Bandgap CsPbCl3 Nanostructure-Based Ultraviolet Photodetectors
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Le résumé fourni par la source
The all-inorganic wide-bandgap CsPbCl 3 perovskite is drawing increasing attention in the ultraviolet detection field due to its salient optoelectronic property and ultraviolet durability. However, the abundant intrinsic defects in polycrystalline CsPbCl 3 nanofilms limit the UV detection performance of self-powered CsPbCl 3 photodetectors. In this study, an efficient low-pressure annealing technique and a 4-chlorobenzoic acid (ClBA) modification strategy are proposed to suppress both the bulk and surface defects of evaporated CsPbCl 3 nanofilms. It is found that low-pressure annealing can effectively ameliorate the crystallization dynamics of the CsPbCl 3 nanocrystal, yielding a more homogeneous film with higher crystallinity and UV absorption capability as well as larger grain sizes and lower trap density. These are favorable for the photoelectric conversion process, thus contributing to a much enhanced UV detection performance. The multifunctional ClBA is further introduced to passivate the surface defects of the CsPbCl 3 nanofilm. The electron-accepting end group of carboxyl in ClBA can effectively coordinate with the positively charged Pb 2+, helping to suppress the Cl – vacancy defect and trap-assisted nonradiative carrier recombination. The ClBA passivation can also alleviate the interfacial energy barrier and enhance the charge transfer driving force, which is beneficial for improving the sensitivity and reducing the dark current level of the device. The best-performing photodetector achieves an excellent on/off ratio of 1.33 × 10 6, a responsivity R of 0.26 A/W, and a detectivity D* of 1.14 × 10 13 Jones at 0 V bias, more superior than those of the previously reported self-powered CsPbCl 3 counterparts. Additionally, our photodetector exhibits salient operational and ambient stability, conducive to their practical applications.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé, mais le titre doit être comparé manuellement.
- Titre Crossref
- Low-Pressure Annealing and Surface Passivation of Self-Powered Wide-Bandgap CsPbCl<sub>3</sub> Nanostructure-Based Ultraviolet Photodetectors
- Date Crossref
- 12/03/2025
- Éditeur
- American Chemical Society (ACS)
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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China University of Geosciences pays non établi dans la noticeUniversité ou école supérieure
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Central South University pays non établi dans la noticeUniversité ou école supérieure
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ITRI International pays non établi dans la noticeStructure de recherche
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School of Mechanical Engineering and Electronic Information pays non établi dans la noticeUniversité ou école supérieure
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School of Mechanical and Electrical Engineering pays non établi dans la noticeUniversité ou école supérieure
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Chongqing CUG Industrial Technology Research Institute Co. pays non établi dans la noticeStructure de recherche
China University of Geosciences, Central South University et ITRI International, avec 3 autres affiliations.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.