Optimization of Transport Critical Currents at 4.2 K – 20 K at Magnetic Fields Up to 31 T for MOCVD REBCO Conductors With Variable Zr and Growth Conditions

Le résumé fourni par la source

The critical current,$I_{\mathrm{c}}$, of REBCO full-width 4 mm short samples made by metal-organic chemical vapor deposition (MOCVD), optimized for high-field applications, were measured at magnetic fields perpendicular to sample plane up to 31.2 T in resistive magnets and temperature range${\text{4.2}}\,{\text{K}}$–55 K. Dependencies of$I_{\mathrm{c}}$, critical current density ($J_{\mathrm{c}}$), and pinning force density ($F_{\mathrm{p}}$) on Zr doping and REBCO growth conditions were studied. SEM images of cross-section and top view of the REBCO layers for tapes with 15%, 20%, and 25% Zr doping show dense REBCO layers without secondary phases or porosity. REBCO tapes with 20% and 25% Zr doping perform better in transport$I_{\mathrm{c}}$(T,$\mu _{o}H$) tests at 20 K and 20 T conditions than tapes with lower Zr doping and can be promising candidates for applications focusing on magnetic plasma confinement.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.