Muon-Induced SEU Analysis and Simulation for Different Cell Types in 12-nm FinFET SRAMs, and 28-nm Planar SRAMs and Register Files

Le résumé fourni par la source

We investigated the effects of positive and negative muons on 12-nm FinFET static random access memories (SRAMs) and 28-nm planar SRAMs and register files (RFs). For 12-nm devices, negative muons led to larger single-event upset (SEU) cross sections in two-fin or smaller cells, while positive muons showed a weaker dependence on the number of fins, with SEU cross sections increasing as cell area decreased. Similar trends were observed in 28-nm devices, where SRAM exhibited a higher SEU cross section under positive muons, while RF showed a larger SEU cross section under negative muons. Simulations reproduced experimental results for positive muons using a conventional single-sensitive volume (SSV) method, but negative muons posed challenges due to nuclear species with different linear energy transfer (LET) values. Standard SSV and multiple-sensitive volume (MSV) models failed to align with experimental data, but an approximation assigning separate critical charge ($Q_{c}$) values for muon direct ionization and secondary-ion ionization successfully reproduced the results, highlighting the need for particle-specific sensitive volume (SV) configurations.

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