Volatile Resistive Switching and Short-Term Synaptic Plasticity in a Ferroelectric-Modulated SrFeO x Memristor
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Le résumé fourni par la source
SrFeO x (SFO) offers a topotactic phase transformation between an insulating brownmillerite SrFeO 2.5 (BM-SFO) phase and a conductive perovskite SrFeO 3 (PV-SFO) phase, making it a competitive candidate for use in resistive memory and neuromorphic computing. However, most of existing SFO-based memristors are nonvolatile devices which struggle to achieve short-term synaptic plasticity (STP). To address this issue and realize STP, we propose to leverage ferroelectric polarization to effectively draw ions across the interface so that the PV-SFO conductive filaments (CFs) can be ruptured in absence of an external field. As a proof of concept, we fabricate ferroelectric Pb(Zr 0.2 Ti 0.8 )O 3 (PZT)/BM-SFO bilayer films with Au top electrodes and SrRuO 3 bottom electrodes. The device exhibits the desired volatile resistive switching behavior, with its low resistance state decaying over time. Such volatility is attributed to the positive polarization charge near the PZT/SFO interface, which can attract the oxygen ions from SFO to PZT and hence lead to the rupture of CFs. Moreover, this volatile device successfully emulates STP-related synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, learning-experience behavior, associative learning, and reservoir computing. Our study showcases an effective method for achieving volatile resistive switching and STP, which may be applied to various systems beyond SFO-based memristors.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé, mais le titre doit être comparé manuellement.
- Titre Crossref
- Volatile Resistive Switching and Short-Term Synaptic Plasticity in a Ferroelectric-Modulated SrFeO <sub> <i>x</i> </sub> Memristor
- Date Crossref
- 30/01/2025
- Éditeur
- American Chemical Society (ACS)
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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South China Normal University Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology pays non établi dans la noticeUniversité ou école supérieure
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Collaborative Innovation Center of Advanced Microstructures pays non établi dans la noticeStructure de recherche
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Nanjing University Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures pays non établi dans la noticeUniversité ou école supérieure
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National Center for International Research on Green Optoelectronics pays non établi dans la noticeInstitution
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Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures pays non établi dans la noticeStructure de recherche
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology — South China Normal University, Collaborative Innovation Center of Advanced Microstructures et Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures — Nanjing University, avec 2 autres affiliations.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.