A Power Transistor Cell Optimized CMOS Power Amplifier for Ku‐Band Phased Array Application

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ABSTRACT A Ku‐band CMOS power amplifier (PA) with an optimized power transistor cell for phased array application has been implemented using ‐μm RF CMOS technology. To alleviate the parasitic effects induced by the metal interconnection between the common source and common gate, the power transistor cell has been optimized. A pair of cascode transistors is employed as a unit cell to construct the power cell so that the metal interconnection loss and power transmission capability of the cascode power transistor cell can be improved. To ease pressure on the hot carrier effect and current intensity requirement at C, the Ku‐band CMOS PA operates under a 1.8 V supply voltage and provides saturation output power of 14.3 dBm with a peak power‐added efficiency of 13.7% at 17 GHz. It shows suitable performances for phased array application.

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