Effect of Ion-Assisted Deposition Energy of RF Source on Optical Properties, Microstructure, and Residual Stress of HfO2 Thin Films

Le résumé fourni par la source

HfO2 thin films were prepared using radio frequency (RF) ion source-assisted deposition, and the effects of auxiliary ion energy on the microstructure, optical properties, and residual stress of the films were systematically studied. The experimental results showed that when the auxiliary ion energy increased, the extinction coefficient, compressive stress, and optical band gap were gradually increased. These changes were attributed to increased grain boundary defects, crystal structure disorder, and grain size decrease due to high-energy ion bombardment. The HfO2 films deposited at a lower ion energy (600 V) exhibited higher surface quality (RMS = 0.78 nm), better optical properties (k = 10⁻5), and lower residual stress (1.26 GPa).

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