Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

Le résumé fourni par la source

III-V photovoltaic devices have demonstrated remarkable performance in many applications, and spalling is a promising technique for reducing device costs by recovering the substrate for reuse. In this study, we investigate the in situ planarization of A-directionally spalled GaAs(100) substrates using metal-organic vapor phase epitaxy (MOVPE) grown$\mathbf{C}:\mathbf{GaAs}$with$\mathbf{CCl}_{\mathbf{4}}$as the carbon source. We have characterized the (100)-oriented growth for various$\mathbf{CCl}_{\mathbf{4}}$flow rates and observed that the$\mathbf{CCl}_{\mathbf{4}}$or its by-products promote material diffusion from the facet tops to the underlying valleys. For facets with a height of 5$\boldsymbol{\mu}\mathbf{m}$on a substrate with an A-spall and$\mathbf{6}^{\circ}\mathbf{B}$-offcut, it took 7$\boldsymbol{\mu}\mathbf{m}$of$\mathbf{C}:\mathbf{GaAs}$to planarize the substrate. For a similar sample, with a$\mathbf{6}^{\circ}\mathbf{A}$-offcut, it required 2$\boldsymbol{\mu}\mathbf{m}$of growth to fill the valleys but there were remnant facets.

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