Photocurrent in Silic in Silicon/Barium Titanate/Nikel Structures

Le résumé fourni par la source

Photosensitive silicon/barium titanate/nickel structures with undoped barium titanate and doped europium were synthesized using the sol-gel method. The current-voltage characteristics were studied under illumination with a xenon lamp, highlighting a monochromatic line in the range of 400–800 nm and in dark mode. The synthesized structures showed the presence of a photocurrent on the reverse branch of the current-voltage characteristics over the entire studied range of illumination wavelengths. The maximum reverse branch current for a structure with undoped barium titanate was achieved when exposed to radiation with a wavelength of 470 nm and was about 0.6 μA for a bias voltage ranging from 2 to 10 V. Doping barium titanate with europium leads to an increase in the photocurrent by 17–26 %.

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