First insights on super-gq DePFET: An improved high performance sensor with increased gain and sub-electron noise levels capabilities

Le résumé fourni par la source

DePFET (Depleted P-channel Field Effect Transistor) sensors have already demonstrated impressive readout noise levels, of around 2 e - ENC at a speed of 5 μ s per line. Recent development efforts suggest that adding an n-implant to the source side of the device can significantly further improve the signal-to-noise ratio (SNR). This approach, the so-called super-g q DePFET technology confines the internal gate to a small area beneath the channel, essentially decoupling the internal and external gate sizes. Simulations indicate that this modification can increase the charge gain by a factor of three (to 1.7 nA/e - ) and reduce the white noise to less than 1 e - ENC, while also mitigating impact ionization near the drain end of the channel. Recent test productions of super-g q DePFETs have been completed, and initial measurements provide first insights into the device transfer characteristics, alignment with simulations and confirmation of the operational viability of this concept.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.