Gain Characterization of LGADs by Means of Transient Current Technique

Le résumé fourni par la source

Low Gain Avalanche Detectors, LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and in precision measurements of rare processes. Such devices are silicon-based and characterized by an intrinsic gain thanks to a p+-doped layer that allows the production of a controlled avalanche of carriers, with a multiplication in the order of 10-100. In contrast with p-in-n diodes, whose collected signal does not change significantly as a function of the bias voltage, once fully depleted, LGADs have a gain that is strongly dependent on the bias voltage, particularly for values close to breakdown voltage. The gain of LGADs is studied not only as a function of the bias voltage but also as a function of the injected charge. Such study allows to expand the characterization of LGAD’s performance from the case of minimum ionizing particles to the case of highly-ionizing particles, which is relevant for several future scientific applications. Tests were performed with an infrared laser and a beta source to characterize the gain of LGAD sensors as a function of bias voltage and injected charge.

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