Thermally Activated Fail Bit Counts of Single and Multi-Level NAND flash Memory

Résumé fourni par la source

NAND flash memory technology is ubiquitous in the current electronic age as they are used in various electronic devices ranging from solid state drives in laptops, SD cards in cell phones as well as enterprise storage drives in servers [1] . NAND flash is non-volatile storage device that does not require power to retain data. However, in practise, effects like thermal activation can cause a loss of charge leading to shift in threshold voltage that can ultimately result in fail bits. It is important to understand the characteristics of these thermally activated fail bit counts (FBC ~ λ FBC ) in single level (SLC) and multi-level (MLC) NAND flash memory [2] – [4] . Here, we experimentally measure λ FBC in 2D and 3D NAND flash memory and compare their characteristics when baked up to 7 hrs at temperature of 120 °C.

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