Strain-Released Cs5Cu3Cl6I2 Scintillators by Rb+ Doping for High-Resolution X-Ray Imaging

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Scintillators with high light yield play a crucial role in medical diagnosis, security inspection, and nondestructive testing. Lead-free copper-based scintillators have recently gained attention for their remarkable luminescence efficiency, stability, and cost-effectiveness. However, their practical application in X-ray detectors is hindered by performance limitations and stability issues. In this study, we propose a strategy of metal ion doping to alleviate lattice strain in the Cs 5 Cu 3 Cl 6 I 2 scintillator. The incorporation of Rb + into the scintillator, termed Cs 5 Cu 3 Cl 6 I 2:Rb, resulted in outstanding light yield (LY), ultrahigh photoluminescence quantum yield (PLQY), and excellent luminescent stability against heat, humidity, and continuous X-ray irradiation. Additionally, Cs 5 Cu 3 Cl 6 I 2:Rb was in situ integrated with a complementary metal oxide semiconductor (CMOS) using blade coating after mixing with polydimethylsiloxane (PDMS). Consequently, the Cs 5 Cu 3 Cl 6 I 2:Rb imaging device achieved a high spatial resolution over 10 line-pairs per millimeter, clearly revealing the internal details of objects. This outcome positions Cs 5 Cu 3 Cl 6 I 2:Rb as a promising candidate for high-resolution X-ray imaging. The study underscores the significance of strain regulation in enhancing scintillation properties and introduces an effective doping strategy to realize superior scintillators for high-resolution X-ray imaging devices.

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