On the Broadband Performance Evaluation of a GaN HEMT Over the Source-Pull & Load-Pull Data

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This paper explores the performance assessment of microwave transistors in power amplifier (PA) design using source-pull (SP) and load-pull (LP) data tuned for maximum output power and maximum efficiency. The conventional “Real Frequency Line Segment Technique-RF-LST” is employed to model the given source-pull and load-pull data as realizable positive real impedance functions. In the course of modelling process, RF -LST based source/load-pull data is constructed employing the numerical optimization technique called “virtual gain optimization”. An example is presented to evaluate the electrical performance of a selected commercial power transistor over 2.14-4.0 GHz. Performance evaluation of the selected active device is completed and new metrics called “Power-Performance-Product (PPP)” and “Efficiency-Performance Product (EPP)” are introduced. This research enhances GaN transistor utility in wideband designs, offering practical performance analysis tools for RF power transistor evaluation.

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