High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors

Résumé fourni par la source

We report on mid-wave infrared InAsSb photodetectors with high-barrier materials implemented in the depletion region. The devices exhibit promising performance at high temperature. At 160 K, the 50% cutoff wavelength is$4.18~\mu \text{m}$, and the shot noise limited detectivity$D^{\star} $is$1.57\times 10 ^{12}$cm$\cdot $Hz$^{1/2}$/W for the peak wavelength of$3.79~\mu \text{m}$. At 300 K, the 50% cutoff wavelength is$4.70~\mu \text{m}$, and the$D^{\star} $is$4.87\times 10 ^{9}$cm$\cdot $Hz$^{1/2}$/W for the peak response wavelength of$4.15~\mu \text{m}$. The dark current of the device is found to be dominated by the diffusion current rather than the generation-recombination current for the temperature range of 160–300 K. We also determine the Varshni parameters of the InAsSb material with varying strain, and the bandgap bowing parameters.

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