Strain Regulation and Defect Passivation of FA‐Based Perovskite Materials for Highly Efficient Solar Cells
Rattachement africain : cn. Niveau de preuve : code pays fourni par la source.
Le résumé fourni par la source
Abstract Formamidine lead triiodide (FAPbI3) perovskites have attracted increasing interest for photovoltaics attributed to the optimal bandgap, high thermal stability, and the record power conversion efficiency (PCE). However, the materials still face several key challenges, such as phase transition, lattice defects, and ion migration. Therefore, external ions (e.g., cesium ions (Cs+)) are usually introduced to promote the crystallization and enhance the phase stability. Nevertheless, the doping of Cs+ into the A‐site easily leads to lattice compressive strain and the formation of pinholes. Herein, trioctylphosphine oxide (TOPO) is introduced into the precursor to provide tensile strain outside the perovskite lattice through intermolecular forces. The special strain compensation strategy further improves the crystallization of perovskite and inhibits the ion migration. Moreover, the TOPO molecule significantly passivates grain boundaries and undercoordinated Pb2+ defects via the forming of P═O─Pb bond. As a result, the target solar cell devices with the synergistic effect of Cs+ and TOPO additives have achieved a significantly improved PCE of 22.71% and a high open‐circuit voltage of 1.16 V (voltage deficit of 0.36 V), with superior stability under light exposure, heat, or humidity conditions.
Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.
Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.
- Titre Crossref
- Strain Regulation and Defect Passivation of FA‐Based Perovskite Materials for Highly Efficient Solar Cells
- Date Crossref
- 08/12/2023
- Éditeur
- Wiley
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
-
Zhejiang Sci-Tech University Key Laboratory of Optical Field Manipulation of Zhejiang Province pays non établi dans la noticeUniversité ou école supérieure
-
Zhejiang University State Key Laboratory of Silicon and Advanced Semiconductor Materials & pays non établi dans la noticeUniversité ou école supérieure
-
Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of Physics Zhejiang Sci‐Tech University Hangzhou 310018 China pays non établi dans la noticeUniversité ou école supérieure
Key Laboratory of Optical Field Manipulation of Zhejiang Province — Zhejiang Sci-Tech University, State Key Laboratory of Silicon and Advanced Semiconductor Materials & — Zhejiang University et Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of Physics Zhejiang Sci‐Tech University Hangzhou 310018 China.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.