Research on Enhanced Detuned-Loading Effect in Integrated Two-Section DFB Lasers with High Modulation Bandwidth

Résumé fourni par la source

A novel high-speed directly modulated two-section distributed feedback (TS-DFB) semiconductor laser based on the detuned-loading effect is proposed and simulated. Grating structure is designed by reconstruction-equivalent-chirp (REC) technique. A π phase-shift is introduced into the reflection grating, which can provide a narrow-band reflection region with a sharp falling slope on both sides of the reflection spectrum, thus enhancing the detuned-loading effect. Owing to its unique dual-falling-edges structure the bandwidth can be improved even when the lasing wavelength shifts beyond the left falling edge due to thermal effect in actual test, in which condition the detuned-loading effect can be used twice, which greatly improves the yield. The modulation bandwidth is increased from 17.5 GHz for a single DFB laser to around 24 GHz when the lasing wavelength is located on the left falling edge of the TS-DFB laser based on detuned-loading effect, and can be increased to 22 GHz for the right side. An eight-channel laser array with precise wavelength spacing is investigated, with side mode suppression ratio (SMSR) > 36dB. Besides, TS-DFB lasers with uniform reflection grating are studied and simulated result shows that modulation characteristic is far inferior to the laser with a phase-shifted grating reflector.

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