Dependence of Ablation Thresholds for Silicon on Laser Incident Angle

Le résumé fourni par la source

This study investigated the dependence of ablation thresholds for Si on the incident angle of a P- or S- polarized XeCl excimer laser (0°, 15°, 30°, 45°, and 60°). As the incident angle increased, the ablation threshold decreased for the P-polarized laser and increased for the S-polarized laser. It was found that the dependence of the ablation threshold on laser incident angle was related to the incidence angle dependence of the reflectance for P-polarized or S-polarized laser light. Based on observed laser incident angle dependence of the ablation threshold for Si, periodic nanostructures of several hundreds of nanometers were formed over the entire surface of a pyramid structure when silicon solar cells were irradiated with linearly polarized laser pulses rotated 90° at a laser fluence of 0.5 J/cm2.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.