Performance Enhancement and In Situ Observation of Resistive Switching and Magnetic Modulation by a Tunable Two‐Level System of Mn Dopants in a ‐Gallium Oxide‐based Memristor

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Abstract Purely gallium oxide‐based memristors (GOMRs) show great potentials in resistive random‐access‐memory (RRAM) due to their chemical stability and resistive switching characteristics with R off / R on ratios up to 10 2 ; indeed, GOMRs with higher R off / R on ratios and more functionalities are more expected. In this study, ferromagnetic amorphous gallium oxide ( a ‐GMO) films with a tunable two‐level system of Mn dopants, i.e., Mn 2+ and Mn 3+ ions, are prepared by scalable polymer assisted deposition. The Pt/ a ‐GMO/Pt memristors show a high R off / R on ratio of 10 3 , at least one order of magnitude higher than those of previously reported purely GOMRs, thanks to the abundant oxygen vacancies (V O s)‐induced low resistance state and Mn 2+ ‐enhanced high resistance state. Meanwhile, magnetic modulation (MM) is realized electrically in the a ‐GOMRs during the RS, through the tuning of bound magnetopolarons (BMPs) by bias voltage‐induced V O s variations, which may be useful for quaternary information coding. Notably, the transition between Mn 3+ and Mn 2+ ions is observed in the GOMRs, which is closely related to the variations of V O concentration and BMP amount, providing an in situ tool to probe the V O ‐induced RS and BMP‐dependent MM. The results give insights to Mn‐doped GOMRs and may be useful for design, fabrication, and testing of multifunctional high‐performance RRAMs.

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