Characterizing the Switching Thresholds of Magnetophoretic Transistors

Résumé fourni par la source

Here, we quantify for the first time the operating conditions of a 3-terminal magnetophoretic transistor architecture used to switch magnetically labeled single cells and single magnetic beads along different paths in microfluidic environments. The semiconducting transport properties are achieved by engineering a small gap between two magnetic disks. Cell and bead motion across the gap is controlled by the gate currents from nearby microwires, which produce competing magnetic fields to toggle the locations of the magnetic potential energy minima. We demonstrate both attractive and repulsive transistor modes, in which cells transfer towards the microwire (attractive mode) or away from microwire (repulsive mode). This novel two-way switching capability allows cells to be written to, or extracted from, specified storage areas in a multiplexed array. For both attractive and repulsive modes, we find that complete switching is achieved with as little as 10–20 mA gate currents in 0–100 Oe static and dynamic external magnetic fields. When combined with a non-fouling brush grafted to the chip surface to reduce non-specific cell adhesion, this platform opens the door to scalable, biologically relevant applications and multiplexing of large single cell arrays.

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