EFFECT OF ELECTRON IRRADIATION ON VOID FORMATION IN HELIUM PREINJECTED ALUMINUM FILMS.

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The effect of 200 kV electron irradiation on evaporated aluminum films preinjected with 35 keV helium ions has been studied.With a dose, above the threshold level, of 15 100 ppm or lx10 ions/cm2 of helium, the damage produced consisted of voids 30-40 A in diameter and dislocation loops 200 A in diameter.Such damage was observed to be en-.«-:•hanced by in-situ electron irradiation at room temperature (0.3 Tm) with a dose rate of 19 2 lx10 .electrons/cm -sec.The enhancement was in the form of increased void number density and void volume in addition to increased interstitial dislocation loop density and loop area.This effect appeared to be temperature dependent, since a decrease in void volume with a smaller increase in interstitial dislocation loop area was observed on electron irradiation at 100'C (0.4 Tm).The annealing of helium preinjected films, prior to electron irradiation, at 100°C resulted in a large increase in void volume accompanied by a slight decrease in dislocation loop number density and loop area although loop size increased.Interstitial loops are found to play an important role in void

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