Structural, electrical and optical properties investigation of nano-sized Sb 0.1 (SnO 2 ) 0.9

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Abstract Solid state reaction method was used to prepare Sb x (SnO 2 ) 1−x (x = 0 and 0.1) with sintering temperatures, 600 °C and 800 °C. The crystallographic properties of undoped and doped SnO 2 materials results showed the tetragonal rutile structure of SnO 2 . The crystallinity was clear and increased with increasing the heat treatment. For the most diffraction peaks the microstrain is negative because d o ˂ d s indicating the generation of residual compressive stress in the surface. Rietveld refinement proved that a good fitting parameters R p , R wp , and χ 2 makes the derived samples to be in a high quality, especially Sb 0.1 (SnO 2 ) 0.9 sample. Scanning Electron Microscopy (SEM) indicated that a spherical shape of SnO 2 with nanoparticles but plates and nanorods shaped of SnO 2 were detected for Sb 0.1 (SnO 2 ) 0.9 compound that was sintered at 800 °C. SnO 2 has grain size 67 nm and 86 nm at sintering temperatures 600 °C and 800 °C respectively, but after adding Sb the grain size decreases to be ≈44 nm at the same sintering temperatures. The electrical resistivity, ρ , of Sb 0.1 (SnO 2 ) 0.9 behaved as semiconductor-like. The magnetoresistance, MR, results showed that ρ (0.6 tesla) < ρ (0 tesla) at T sint = 600 °C where ρ (0.6 tesla) > ρ (0 tesla) at T sint = 800 °C because the crystallinity increased with increasing of the sintering temperatures. The results of seebeck showed that charge carriers are n-tape at T sint = 600 °C and p-type at T sint = 800 °C. The optical energy band, E g of Sb 0.1 (SnO 2 ) 0.9 which were 2.49 eV and 3.21 eV at T sint = 600 °C and 800 °C respectively and the high values of the transmittance make this compound is candidate to work as window layer in solar cell applications. The results of susceptibility denotes that the Sb 0.1 (SnO 2 ) 0.9 compound is a paramagnetic material.

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