Effect of Gamma Radiation on New Promising Quaternary Cu2lnsns4 Semiconductor: Transformation via Hydrophobic To Hydrophilic Surface for Controlled Photocatalytic Performance
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The present work highlights the influence of gamma-radiation on Cu2InSnS4 (CITS) thin films deposited by spray pyrolysis technique. Irradiation treatment was carried out by different doses (20-40-60-80 and 100 kGy) of γ-radiation using Co60 as source. The physical investigations of samples were demonstrated using energy dispersive X-ray spectrometry (EDX), X-ray diffraction (XRD), Maud software, scanning electron microscopy (SEM), Spectrophotometer and Drop Shape Analysis System. Firstly, XRD patterns reveal a decrement in peak intensities followed by the division of peaks related to (204) and (312) lattice plans after gamma-radiation. All films were crystalized into stannite structure and the crystallites were orientated towards (112) plan. Secondly, EDX spectroscopy reflects an appreciably decrease in Cu, In, Sn and S contents. SEM micrographs clearly show a total morphological modification from nanospherical to pyramidal shapes at 60 kGy, hierarchical rods and lamellar shapes at 100 kGy. Therefore, a special emphasis has been focused on surface wettability of irradiated films, which point out the hydrophilic surface after irradiation. As known, hydrophilic character has a notable beneficial role on photocatalytic activity that may be due to the active surface area and the adsorption of dye. Based on the relationship between hydrophilicity and photocatalysis, we have confirmed experimentally the better capacity of irradiated CITS thin film with 60 kGy to decompose Rhodamine B (RhB) dye under Xenon irradiation. Long-term runs confirm the stability of irradiated CITS with 60 kGy for photocatalytic process after an overall duration for 5h:30 (4 cycles of 120 min each). This result demonstrates that irradiated CITS with 60 kGy may considered as an efficient stable photocatalyst for the remediation of water polluted.
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