A Comprehensive Reliability Characterization of 5G SoC Mobile Platform Featuring 7nm EUV Process Technology

Le résumé fourni par la source

The product reliability of 7nm FinFET technology is demonstrated with 5G SoC platform. RO aging and other highspeed operating 5G IPs show an expected reliability model behavior, which has further improvement of frequency noise reduction through 3-plate MIM integration and high thermal conductivity EMC featuring ultra-low alpha particle (2) emitter for the encapsulation of 5G product. Radiation effects are extensively examined at both chip and transistor level, proving the excellent SER and SEL due to less charge collection in narrow fin and robust TID effect. Degradation of 6T SRAM cell stability and performance caused by BTI is comparable to previous 10nm technology. Product level reliability is further evaluated through 256Mb SRAM array and AP/Modem for mmWave 5G connectivity. The current 7nm technology featuring EUV is being expanded to automotive, HPC and AI beyond high volume 5G system.

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