Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga 2 O 3 nanowire array

Le résumé fourni par la source

Abstract Controllable deposition of Ga droplets on a GaN template is discussed in detail in the present work. It is found that the Ga droplet density shows apparent nonlinear dependence on the flux of triethylgallium under certain annealing conditions. A simplified model based on the weakening of cluster mobility is proposed to explain the phenomenon. In addition, based on the different mobility of Ga on different substrates, a SiO 2 mask with ordered nanopore array is designed and optimized for controllable catalyst deposition. By further optimizing the deposition and annealing process, a higher filling rate of nanopores is obtained, and ordered β-Ga 2 O 3 nanowire arrays perpendicular to substrates are then achieved. The controllable uniform vertical nanowire array would further promote optimization of nanowire growth and device fabrication.

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