Small-signal design consideration for two-dimensional change-over switch GaN MMICs

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Abstract This paper presents small-signal design consideration for two-dimensional change-over switch GaN monolithic microwave integrated circuits (MMICs). For the design of two-dimensional change-over single pole single throw (SPST) switch circuit which electrically changes between low pass filter and high pass filter, the demands for design conditions are as follows: 1. two-dimensional switch with time/frequency domain. 2. The sufficient isolation in off-state at the signal frequencies for both low band and high band. Two-dimensional change-over single pole double throw (SPDT) switch provides a duplexer for frequency division duplex operation and an SPDT switch for time division duplex operation for low-cost the fifth generation (5G) front-ends (FEs). GaN two-dimensional change-over SPST and SPDT MMIC switches are successfully demonstrated by using 0.25 μ m GaN foundry process for high power handling capability in 5G FEs. The demonstrated GaN MMIC switches shows almost the same two-dimensional switching characteristics as the designed ones.

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