Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B 4 C thin film

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Abstract We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B 4 C on SiC and graphene on B 4 C had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on B 4 C acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on B 4 C was highly boron doped, and the hole concentration could be controlled over a wide range of 2 × 10 13 to 2 × 10 15 cm −2 . Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.

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