The growth and structure of epitaxial graphene nanoribbons

Le résumé fourni par la source

Single-layer epitaxial graphene ribbons grown from SiC(0001) are orientationally ordered with the substrate. The epitaxy allows the growth of narrow graphene ribbons with predetermined edge types from steps lithographically prepatterned in the SiC substrate. Controlling their growth on SiC step walls has significantly advanced in the last decade. In this review, we cover the state-of-the-art optimized epitaxial graphene ribbon growth methods and show how the electronic properties of these ribbons are related to their edge type and the SiC polytype they are grown from.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.