Pinning of a ferroelectric Bloch wall at a paraelectric layer

Le résumé fourni par la source

crystalline superlattices performed in this study suggest that a paraelectric layer with a thickness comparable to the thickness of the domain wall itself can act as an efficient pinning layer. At the same time, such a layer facilitates the possibility to switch domain wall helicity by an external electric field or even to completely change the characteristic structure of a ferroelectric Bloch wall passing through it. Thus, ferroelectric Bloch domain walls are shown to be ideal nanoscale objects with switchable properties. The reported results hint towards the possibility to exploit ferroelectric domain wall interaction with simple nanoscale devices.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.