Epitaxial growth of GaP/AlGaP mirrors on Si for low thermal noise optical coatings

Le résumé fourni par la source

GaP/AlGaP multilayers were grown directly on Si to form a single crystalline mirror with very low mechanical loss. The effects of growth initiation, nucleation layers, and growth variations on antiphase domains and overall film quality were investigated. Using the conditions which yielded smooth nucleation layers and fewer antiphase domains, GaP/AlGaP mirror pairs were grown. These epitaxially-integrated mirrors on Si have potential use in gravitational wave detection, relying on precision interferometric sensing, which requires extremely low mechanical loss in the optical cavities.

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