Electrodeposited amorphous silicon for solar applications. Summary report, September 15, 1978-May 31, 1979

Le résumé fourni par la source

The work has been on: (1) the development of semiconductor doping of electrodeposited amorphous silicon, and (2) the characterization of physical and electronic properties of the doped silicon. For the doping of electrodeposited silicon, the electrolytic reduction and codeposition of possible n- and p-type dopants was investigated. Three dopants - B, Li, and Ga - were found that could be codeposited with the silicon. Annealing was investigated for activation of these dopants in the silicon. The deposition parameters of temperature and cathode substrates were studied. The hydrogen content of electrodeposited silicon was found to decrease with increasing temperature from about 30 atom percent at 35/sup 0/C. The deposition onto aluminum substrate was demonstrated in addition to the prior use of titanium substrates. The electronic properties of doped deposits were studied by differential capacitance and Schottky diode measurements. The dopants were found to be activated by annealing in the range of 350 to 400/sup 0/C. This was also found to be the range for the start of hydrogen release from the silicon. Both n- and p-type doping has been demonstrated.

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