Formation of the dopant-oxygen vacancy complexes and its influence on the photoluminescence emissions in Gd-doped HfO2

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Rare earth doping is widely used to improve the desired properties of high-k dielectric oxides. However, whether rare earth doping can suppress the formation of oxygen vacancies is still debated. By using the first-principles calculations with the generalized gradient approximation and more advanced hybrid functional, we have investigated the structural and electronic properties of the dopant-oxygen vacancy complexes in Gd-doped HfO2. Our calculations indicate that the Gd dopants interacting with oxygen vacancies can substantially shift up the VO energy states towards the conduction band edge. This together with other effects, such as capturing the localized electrons at the oxygen vacancy by Gd dopants and suppressing the randomicity of oxygen vacancy formation, improves the reliability of the devices made from Gd-doped HfO2. Based on our calculated results, we have presented an explanation for the experimentally observed decrease of the VO-related photoluminescence intensities upon Gd doping in HfO2.

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