β-Ga2O3 单晶NH3中氮化的研究

Le résumé fourni par la source

Nitridated b-Ga 2 O 3 (100) substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of b-Ga 2 O 3 wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900dC, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.

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