High‐Temperature Annealing‐Induced Performance Degradation Mechanisms of GaInP/GaAs/Ge Triple‐Junction Solar Cells
Lingyuan Wu, Tianle Shi, Xianfeng Wu, Yanglong Li et autres
As a high‐efficiency space photovoltaic technology, the high‐temperature annealing‐induced performance degradation of GaInP/GaAs/Ge triple‐junction solar cells has attracted tremendous attention. In this article, rapid annealing (temperature range 600–700 °C, heating rate 40 °C s −1 ) was performed on GaInP/GaAs/Ge solar cells, …
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