Xiangli Zhou

Revealing wake-up mechanism in antiferroelectric Hf x Zr 1− x O 2 capacitors through spatially selective wake-up

Xiuyi Wang, Zhiquan He, Yang Yang, Guanlin Li et autres

Abstract Antiferroelectric (AFE) devices are promising for nonvolatile memory applications due to their high endurance and low operating voltage, while their double hysteresis loops and high breakdown fields enable static energy-storage applications. However, their reliability evolution under electric-field cycling and the underlying …

Modulating Oxygen Vacancy Concentration for High-Performance Undoped HfO 2 Ferroelectric Capacitors

Xuanxi Liu, Yang Yang, Guanlin Li, Zhiquan He et autres

Ferroelectric HfO₂ thin film has attracted considerable attention due to its ability to induce ferroelectricity without doping. However, its performance is still far inferior to that of doped HfO₂-based ferroelectric films, which limits its further development. In this study, the ferroelectric performance …

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