Patterned, low-temperature growth of transition metal dichalcogenides for low resistance raised contacts
Inha Kim, Dorottya Urmossy, Kyuho Lee, Naoki Higashitarumizu et autres
Transition metal dichalcogenide (TMD) monolayers are promising channel materials for next-generation electronic devices. A challenge is the high contact resistance between monolayer TMDs and metal contacts, especially for holes. In this regard, raised source/drain contacts are promising. However, the direct, patterned growth …
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