Strain-engineered photogalvanic anisotropy in SnP2X6 (X = S, Se) monolayers for high-performance optoelectronics
Yunkang Tang, Liang Ma, Xing Xu, Yicheng Wang et autres
The photogalvanic effect (PGE) in non-centrosymmetric materials can generate stable currents without external bias, holding significant potential for optoelectronic applications. However, the limited absorption range and weak photoresponse in conventional materials have hindered practical applications. Herein, we investigate the strain-engineered PGE in …
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Applied Physics Letters