Teressa S. Basko

Structural and electrical characterization of short-wave infrared GeSn diodes [Invited]

Punam Murkute, Nathan McKee, PLOUFFE DYLAN, Eikhyun Cho et autres

Group-IV (Si)GeSn alloys are rapidly emerging as promising candidates for monolithically integrated infrared (IR) photonic devices, offering tunable direct band gaps and full compatibility with CMOS technology. Ge 0.91 Sn 0.09 enables strong absorption in the short-wave infrared (SWIR) region near 2 …

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Ground optical communication array terminal (GOCArT)

Michael A. Krainak, Hong-Fu Ting, Benjamin Petrak, Zhao-Huan Yu et autres

Investigation of background doping and polarity in the unintentionally doped layer of PIN Ge0.91Sn0.09 photodiodes on Si substrate

Punam Murkute, Nathan McKee, Eikhyun Cho, Theodore J. Ronningen et autres

High-performance photodetector focal plane arrays are crucial for short-wave infrared (SWIR) imaging and remote sensing systems using less traditional, group IV materials such as GeSn. Two critical parameters for achieving optimal performance in PIN based photodetectors are identifying the background doping concentration …

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