Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
W. Snoeys, Gianluca Aglieri Rinella, A. Andronic, M. Antonelli et autres
The long term goal of the CERN Experimental Physics Department R&D on monolithic sensors is the development of sub-100nm CMOS sensors for high energy physics. The first technology selected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 included several …
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