2020
article
OpenAlex
Yong‐Yan Zhao, Wu‐Ji Sun, Jia Wang, Jinghui He et autres
Abstract The implementation of memristors that are wearable and transparent has attracted significant attention. However, the development of high‐performance memristors that simultaneously possess high flexibility and environmental stability has remained a tremendous challenge suffering from limited choice of materials with both good …
cn
(code pays fourni par la source)
Accès ouvert
2019
article
OpenAlex
Xue‐Feng Cheng, Jin Zhou, Jinghui He, Hua Li et autres
Abstract Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power, allowing for low‐power computation and multilevel information storage. Many organic‐inorganic lead perovskites are reported to …
cn
(code pays fourni par la source)
2019
article
OpenAlex
Xue‐Feng Cheng, Jia Wang, Chuang Yu, Jinghui He et autres
Abstract Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, …
cn
(code pays fourni par la source)
2019
article
OpenAlex
Xue‐Feng Cheng, Yong‐Yan Zhao, Jin Zhou, Jinghui He et autres
Abstract Memcapacitors are emerging as an attractive candidate for high‐density information storage due to their multilevel and adjustable capacitances and long‐term retention without a power supply. However, knowledge of their memcapacitive mechanism remains unclear and accounts for the limited implementation of memcapacitors …
cn
(code pays fourni par la source)
2018
article
OpenAlex
Jin Zhou, Xue‐Feng Cheng, Bi‐Jun Gao, Chuang Yu et autres
Abstract Nitrogen dioxide (NO2) emission has severe impact on human health and the ecological environment and effective monitoring of NO2 requires the detection limit (limit of detection) of several parts‐per‐billion (ppb). All organic semiconductor‐based NO2 sensors fail to reach such a level. …
cn
(code pays fourni par la source)
2018
article
OpenAlex
Yong‐Yan Zhao, Xue‐Feng Cheng, Wen Hu Qian, Jin Zhou et autres
Abstract In recent years, numerous organic molecules and polymers carrying various functional groups were synthesized and used in fabrication of wearable electronic devices. Compared to previous materials that suffer from poisonousness, stiffness and complex film fabrication, we circumvent above matters by taking …
cn
(code pays fourni par la source)
2018
article
OpenAlex
Xue‐Feng Cheng, Xianghui Hou, Jin Zhou, Bi‐Jun Gao et autres
Abstract Recently, organic–inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield …
cn
(code pays fourni par la source)
2017
article
OpenAlex
Xue‐Feng Cheng, Shugang Xia, Xianghui Hou, Xin Hua Xiao et autres
Abstract Improving organic devices via molecular design is challenging and difficult to rationalize because individual molecular properties always convolute with intermolecular interaction and crystallinity to contribute the device performance. In this work, it is demonstrated for the first time that racemic effect …
cn
(code pays fourni par la source)
2017
article
OpenAlex
Xianghui Hou, Xue‐Feng Cheng, Jin Zhou, Jinghui He et autres
Recently, surface engineering of the indium tin oxide (ITO) electrode of sandwich-like organic electric memory devices was found to effectively improve their memory performances. However, there are few methods to modify the ITO substrates. In this paper, we have successfully prepared alkyltrichlorosilane …
cn
(code pays fourni par la source)
2017
article
OpenAlex
Xianghui Hou, Xue‐Feng Cheng, Xin Hua Xiao, Jinghui He et autres
Organic multilevel random resistive access memory (RRAM) devices with an electrode/organic layer/electrode sandwich-like structure suffer from poor reproducibility, such as low effective ternary device yields and a wide threshold voltage distribution, and improvements through organic material renovation are rather limited. In contrast, …
cn
(code pays fourni par la source)
2017
article
OpenAlex
Xue‐Feng Cheng, Erbo Shi, Xianghui Hou, Jie Shu et autres
Ternary resistive random access memory (RRAM) devices are fabricated from 1D d‐π conjugated coordination polymer chains, which are synthesized via the coordination between Ni(II) salts and benzenetetramine or 3,3′,4,4′‐biphenyltetramine in a solution process. The as‐fabricated devices can retain their memory states for …
cn
(code pays fourni par la source)
2016
article
OpenAlex
Xue‐Feng Cheng, Erbo Shi, Xianghui Hou, Shugang Xia et autres
Herein, two molecules based on urea and thiourea, which differ by only a single atom, were designed, successfully synthesized, and fabricated into resistive random-access memory devices (RRAM). The urea-based molecule showed binary write-once-read-many (WORM) storage behavior, whereas the thiourea-based molecule demonstrated ternary …
cn
(code pays fourni par la source)